Optimized RF Switching Device Architecture for Impedance Control Applications

ABSTRACT

A switch architecture having open reflective unselected ports. Signals can be selectively coupled between a common port and at least one selectable port through series connected switches. When one or more port is selected, the remaining ports are opened. In addition, associated “shuntable” switches from each of the selectable ports to ground are always open, regardless of the ON or OFF state of the series switches; thus, there is no normally active connection of the selectable ports to ground, but the presence of the shuntable switches provides electrostatic discharge protection for all ports. Embodiments of the invention allow configurability between a traditional architecture and an open reflective unselected port architecture, and include integrated circuit and field effect transistor embodiments.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of priority from U.S. ProvisionalPatent Application No. 61/887,224, filed Oct. 4, 2013, entitled“Optimized RF Switching Device Architecture for Impedance ControlApplications”, the entire disclosure of which is hereby incorporated byreference.

BACKGROUND

(1) Technical Field

This invention generally relates to electronic circuitry, and morespecifically to switching devices particularly suited for use with radiofrequency (RF) field effect transistors (FETs).

(2) Background

Electronic circuitry often uses FETs as electrical switches, resistors,and/or capacitors. One such usage of FETs is in integrated circuit RFswitches. An RF switch is a device to route RF signals throughtransmission paths, such as between an antenna and multiple transceiversin a radio system; an example of such a radio system is a cellulartelephone.

FIG. 1 is a schematic diagram of a typical prior art RF single-pole,multiple-throw switch circuit 100. Radio frequency signals can beselectively coupled between a common connection port RFC and at leasttwo selectable RF ports (four such ports, RF1-RF4, are shown). Thecommon connection port RFC is typically connected to an antenna (eitherdirectly or through additional circuitry, such as RF filters). Theselectable RF ports RF1-RF4 are typically used to connect the RFC portto other circuitry (not shown), such as RF transceivers (again, eitherdirectly or through additional circuitry).

In operation, if selectable port RF1 is selected to be coupled to theRFC port, then an associated series switch 1021 is closed (i.e.,switched “ON”) to complete the port coupling, and an associated shuntswitch 1041 coupled between the selected port and circuit ground isopened (i.e., switched “OFF”). Concurrently, the associated seriesswitches 102 ₂-102 ₄ for the other selectable ports RF2-RF4 are openedand their associated shunt switches 104 ₂-104 ₄ are closed, therebyshunting each of the open ports to ground. The various series and shuntswitches are opened or closed in similar fashion to couple any otherselectable port RF2-RF4 to the RFC port. All of the switches aretypically implemented as FETs on an integrated circuit (IC) die or“chip”. Not shown is the conventional control circuitry for selectingand unselecting ports.

The closed shunt switches result in improved isolation of the switch 100by shunting the open ports RF2-RF4 to ground; such a configurationresults in short reflective unselected ports. However, a shortreflective port RF switch 100 of the type shown in FIG. 1 is notsuitable for all applications. In particular, such an architecture willshort out the load impedance connected to an unselected port. Thepresent invention addresses such shortcomings.

SUMMARY OF THE INVENTION

The present invention provides greater flexibility than the prior art byproviding a switch with open reflective unselected ports at radiofrequencies, and which may be alternatively configured as having eitheropen or short reflective unselected ports. Embodiments of the presentinvention provide for open reflective unselected ports in an RF switchwhile keeping such ports protected from electrostatic discharges (ESD).

Embodiments of the invention includes an RF switch circuit which may besingle or multiple pole, single or multiple-throw. Radio frequencysignals can be selectively coupled between a common port and at leastone selectable port. In operation, if a selectable port of the switch isselected to be coupled to the common port, then an associated seriesswitch is closed to complete the port coupling. Concurrently, theassociated series switches for the remaining selectable ports areopened. Associated switches from each of the selectable ports to groundare always open, regardless of the ON or OFF state of the seriesswitches. In a sense, the switch as a whole is “shuntless” in normaloperation as an RF switch since there is no normally active connectionof the selectable ports to ground, or the switch as a whole may beconsidered to be “shuntable” since it is capable of conducting underbreakdown conditions due to a voltage overload to deal with ESD andother overvoltage events. All of the switching elements are preferablyimplemented as FETs on an integrated circuit (IC) die or “chip”.

An important aspect of the architecture of the inventive switch is thatthe shuntable switches for both the selected and unselected ports can beconfigured to be open at all times (i.e., switched “OFF”). This providesan open reflective termination (high impedance) for unselected ports,which is useful in impedance or aperture tuning applications. Inaddition, the presence of the shuntable switches provides ESD protectionfor all ports.

Embodiments of the present invention further allow configurabilitybetween a traditional short reflective unselected port architecture andthe new open reflective unselected port architecture. Suchconfigurability may be accomplished during integrated circuitmanufacturing by applying a suitable interconnect mask, or aftermanufacturing by use of field configurable switch elements such asfusible links or additional active switching components.

The details of one or more embodiments of the invention are set forth inthe accompanying drawings and the description below. Other features,objects, and advantages of the invention will be apparent from thedescription and drawings, and from the claims.

DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram of a typical prior art RF single-pole,multiple-throw switch circuit.

FIG. 2A is a schematic diagram of an example of an RF single-pole,multiple-throw switch circuit in accordance with the present invention.

FIG. 2B is a schematic diagram of an example of an alternative RFsingle-pole, multiple-throw switch circuit in accordance with thepresent invention.

FIG. 3 is a schematic diagram of an individual RF switch circuit elementin accordance with the present invention.

FIG. 4 is a schematic diagram of a series tuning application using an RFsingle-pole, multiple-throw switch circuit in accordance with thepresent invention.

FIG. 5 is a schematic diagram of a first shunt tuning application usingan RF single-pole, multiple-throw switch circuit in accordance with thepresent invention.

FIG. 6 is a schematic diagram of a second shunt tuning application usingan RF single-pole, multiple-throw switch circuit in accordance with thepresent invention.

Like reference numbers and designations in the various drawings indicatelike elements.

DETAILED DESCRIPTION OF THE INVENTION

The present invention provides greater flexibility than the prior art byproviding a switch with open reflective unselected ports at radiofrequencies, and which may be alternatively configured as having eitheropen or short reflective unselected ports. Embodiments of the presentinvention provide for open reflective unselected ports in an RF switchwhile keeping such ports protected from electrostatic discharges (ESD).

Embodiments of the present invention further allow configurabilitybetween a traditional short reflective unselected port architecture andthe new open reflective unselected port architecture. Suchconfigurability may be accomplished during integrated circuitmanufacturing by applying a suitable interconnect mask (e.g., a metallayer mask), or after manufacturing by use of field configurable switchelements such as fusible links or additional active switchingcomponents.

FIG. 2A is a schematic diagram of an RF single-pole, multiple-throwswitch circuit 200. Radio frequency signals can be selectively coupledbetween a common connection port RFC and at least one selectable RF port(N such ports, RF1-RFN, are shown). As in FIG. 1, the common connectionport RFC is typically connected to an antenna or other RF circuitry(either directly or through additional circuitry, such as RF filters).The selectable RF ports RF1-RFN are typically used to connect the RFCport to other circuitry (not shown), such as RF transceivers (again,either directly or through additional circuitry).

In operation, if selectable port RF1 of the switch 200 is selected to becoupled to the RFC port, then an associated series switch 202 ₁ isclosed to complete the port coupling. Concurrently, the associatedseries switches 202 ₂-202 _(N) for the remaining selectable portsRF2-RFN are opened. The various series switches are opened or closed insimilar fashion to couple any other selectable port RF2-RFN to the RFCport (in some applications, more than one selectable port RF1-RFN may becoupled to the RFC port). However, in contrast to the prior art shown inFIG. 1, in the illustrated embodiment the associated switches 204 ₁-204_(N) between the selectable ports and ground are always open, regardlessof the ON or OFF state of the series switches 202 ₁-202 _(N). In asense, the switch 200 as a whole is “shuntless” in normal operation asan RF switch since there is no normally active connection of theselectable ports to ground, or the switch as a whole may be consideredto be “shuntable” since it is capable of conducting under breakdownconditions due to a voltage overload to deal with ESD and otherovervoltage events, as described below. All of the switches arepreferably implemented as FETs on an integrated circuit (IC) die or“chip”.

An important aspect of the architecture of the switch 200 is that theswitches 204 ₁-204 _(N) for both the selected and unselected ports canbe configured to be open at all times (i.e., switched “OFF”). Thisprovides an open reflective termination (high impedance) for unselectedports, which is useful in impedance or antenna aperture tuningapplications. In addition, the presence of the switches 204 ₁-204 _(N)provides ESD protection for all ports, as explained in greater detailbelow.

FIG. 2B is a schematic diagram of an example of an alternative RFsingle-pole, multiple-throw switch circuit 210 in accordance with thepresent invention. As in the example shown in FIG. 2A, RF signals can beselectively coupled between a common connection port RFC and at leastone selectable RF port (N such ports, RF1-RFN, are shown). Each of the Nselectable ports has an associated series switch 202 ₂-202 _(N). Incontrast to the example shown in FIG. 2B, rather than each selectableport having an associated shuntable switch 204 ₁-204 _(N) between theselectable port and ground, only a single shuntable switch 204 _(C) isinserted, between the common port and ground.

In operation, if selectable port RF1 of the switch 210 is selected to becoupled to the RFC port, then an associated series switch 202 ₁ isclosed to complete the port coupling. Concurrently, the associatedseries switches 202 ₂-202 _(N) for the remaining selectable portsRF2-RFN are opened. The various series switches are opened or closed insimilar fashion to couple any other selectable port RF2-RFN to the RFCport (in some applications, more than one selectable port RF1-RFN may becoupled to the RFC port). Regardless of the ON or OFF state of theseries switches 202 ₁-202 _(N), the shuntable switch 204 _(C) betweenthe common port and ground is always open, thus providing similarbenefits (e.g., ESD protection) to the embodiment shown in FIG. 2A. Asshould be clear, the embodiment shown in FIG. 2B requires fewercomponent devices.

FIG. 3 is a schematic diagram of an individual RF port switch 300 (seedotted box in FIG. 2A) in accordance with the present invention. Aseries switch 302 from the common port RFC to a selectable port RFx istypically implemented with one or more series connected FETs (more FETsin series can handle a higher signal power level). A “shuntable” switch304 from the selectable port RFx to ground may be implemented as one ormore series connected FETs (again, more FETs in series can handle ahigher signal power level). The number of component FETs (the series“stack height”) for the series switch 302 need not be the same as thestack height of the shuntable switch 304. (Note that for the embodimentshown in FIG. 2A, the shuntable switch 304 would be positioned on theRFC port side of the series switch 302.)

For an open reflective configuration, a bias voltage is applied to thegates of the FETs of the shuntable switch 304 so that the FETs are in apermanent OFF state. Consequently, the unselected ports of the switch300 maintain a high impedance at all times. The bias voltage will dependon the type of FET used in the circuit, and may be optimized for RFperformance.

In addition, since a shuntable switch 304 is still electrically coupledbetween each port (selected and unselected) and ground, even if in anOFF state, a voltage on the associated port RFx in excess of thebreakdown threshold of the switch 304 (e.g., an ESD event) will causethe switch 304 to conduct and shunt the voltage to ground. Accordingly,the inventive architecture will still protect each port from anovervoltage or ESD event.

The stack height of the shuntable switch 304 can be optimized forspecific applications. If designed with more FETs in series, theshuntable switch 304 breakdown voltage threshold and RF power handlingcapability are higher and will contribute less harmonic content to theRF signal, while still protecting the port from an ESD event andproviding an open-reflective impedance.

Also of note is that the design parameters (e.g., gate width, gatelength, device type, doping levels, etc.) for the FETs in a shuntableswitch 304 are more flexible than in the prior art architecture for manyapplications because the purpose of the shuntable switch 304 need notinclude isolation improvement per port (isolation improvement typicallyrequires low resistance). In particular, the FET design parameters maybe optimized for ESD protection performance.

Another benefit of the inventive architecture is that a single base ICdesign can be configured as either a traditional short reflectiveunselected port architecture or the new open reflective unselected portarchitecture. Such configurability may be accomplished during integratedcircuit manufacturing by applying a suitable interconnect mask, suchthat each shuntable switch 304 is permanently biased to an OFF state, orin the alternative is coupled to conventional bias and control circuitryto behave as a traditional short reflective unselected portarchitecture.

Alternatively, embodiments of the invention may be configured aftermanufacturing by use of field configurable elements such as fusiblelinks or by adding active switching components. For example, referringto FIG. 3, a configuration switch 306 coupled to the FET gates of ashuntable switch 304 may selectively couple the gates to a bias source308 having a suitable voltage to permanently bias the shuntable switch304 to an OFF state, thus conforming to an open reflective unselectedport architecture. In the alternative, the configuration switch 306couples the FET gates of the shuntable switch 304 to the inverse of asignal from a switch path control 310 applied to the series switch 302,so that the series switch 302 and the shuntable switch 304 always havethe opposite conductive states. The switch path control 310 operates inknown manner to select at least one port RFx to be coupled to the commonport RFC. The resulting circuit thus will conform to a traditional shortreflective unselected port architecture.

An additional benefit of the open reflective unselected portarchitecture is the improvement in harmonic performance due to lowervoltage across each non-linear FET. In an RF switch 200 of the typeshown in FIG. 2A, with the series and shuntable FET switches 302, 304both OFF, the total OFF stack height is greater for the OFF branches,thus reducing voltage developed across each OFF FET and reducing theharmonic content on the RF signal. Further, the series and shuntable FETstacks can be optimized for insertion loss and harmonic performance inparticular applications.

Embodiments of the invention provide flexibility and utility notavailable with the prior art short reflective unselected portarchitecture. For example, FIG. 4 is a schematic diagram of a seriestuning application using an RF single-pole, multiple-throw switchcircuit 400 in accordance with the present invention. In this example,the input and output nodes of four impedance elements Z₁-Z₄ are seriesconnected between ports RF1 and RF2. The input ports of a switch 400 inaccordance with the present invention are coupled to the input/outputnodes of the impedance elements as shown, in “front” of the respectiveimpedance elements Z₁-Z₄ (i.e., on the RF1 side), with the common portconnected to RF2. Depending on the switch position, the following statescan be set (the 0 state means that all ports are isolated):

State Total Series Impedance (RF1 to RF2) 0 Z₁ + Z₂ + Z₃ + Z₄ 1 Z₁ +Z₂ + Z₃ 2 Z₁ + Z₂ 3 Z₁ 4 short

This application requires a “shuntless” or “shuntable” architecture sothat unselected ports maintain a high impedance and are not shorted toground, as would be the case with a traditional switch of the type shownin FIG. 1. This application may be used, for example, to provide avariable impedance for tuning an RF circuit or antenna.

FIG. 5 is a schematic diagram of a first shunt tuning application usingan RF single-pole, multiple-throw switch circuit 500 in accordance withthe present invention. In this example, five impedance elements Z₁-Z₅are series connected between ports RF1 and RF2. The input ports of aswitch 500 in accordance with the present invention are coupled as shownto tapping points A-D between the respective impedance elements Z₁-Z₅,with the common port connected to ground. Depending on the switchposition, the following states can be set:

Node Shorted Impedance Impedance State to Ground seen from RF1 seen fromRF2 1 A Z₁ Z₂ + Z₃ + Z₄ + Z₅ 2 B Z₁ + Z₂ Z₃ + Z₄ + Z₅ 3 C Z₁ + Z₂ + Z₃Z₄ + Z₅ 4 D Z₁ + Z₂ + Z₃ + Z₄ Z₅

This configuration may be used, for example, to select different tappingpoints A-D across the length of a transmission line or antennastructure. The switch 500 selectively connects tapping points to groundto change the electrical behavior of the circuit; the electricalbehavior may be, for example, a resonant frequency or an impedancelevel. This application would not work with a traditional switch becauseall tapping points would be shorted to ground through the switch portsregardless of the switch state.

FIG. 6 is a schematic diagram of a second shunt tuning application usingan RF single-pole, multiple-throw switch circuit in accordance with thepresent invention. In this example, four impedance elements Z₁-Z₄ areconnected as shown through a switch 600 between an input Zin and ground.In particular, the input ports of a switch 500 in accordance with thepresent invention are coupled as shown to respective impedance elementsZ₁-Z₄, with the common port comprising an input port, Zin. The totalimpedance seen looking into the common port can be varied based on thestate of the switch, and will include the combined impedance of alltermination impedances Z_(x) plus the impedance Zoff of each of theunselected ports of the switch 600 itself. Depending on the switchposition, the following states can be set for the selection of a singleport at a time (the values shown assume that the impedance of theselected path is negligible; in some cases the path impedance may needto be taken into account):

State Zin Impedance 0 (Zoff + Z₁ ∥ (Zoff + Z₂) ∥ (Zoff + Z₃) ∥ (Zoff +Z₄) 1 Z₁ ∥ (Zoff + Z₂) ∥ (Zoff + Z₃) ∥ (Zoff + Z₄) 2 (Zoff + Z₁) ∥ Z₂ ∥(Zoff + Z₃) ∥ (Zoff + Z₄) 3 (Zoff + Z₁∥ (Zoff + Z₂) ∥ Z₃ ∥ (Zoff + Z₄) 4(Zoff + Z₁) ∥ (Zoff + Z₂) ∥ (Zoff + Z₃) ∥ Z₄

This configuration can be used, for example, to implement a digitallytunable reactance. This application would not work with a traditionalswitch because the impedances of all unselected ports would be shortedto ground in such switches. Note that the values shown in the abovetable will differ if two or more ports are selected to be coupled to thecommon port. Note also that while Zoff is assumed in the table above tobe the same for each selectable port of the switch 600, that need not bethe case—the Zoff value for each port can be different from other ports,and may be optimized for particular applications on a port by portbasis.

In the examples shown in FIGS. 4-6, the Z_(x) impedance elements may beany instance of or combination of capacitors, resistors, inductances,transmission lines, mutual inductance, filtering elements, etc., and maybe integrated and/or external to the switch integrated circuit chip.

The example embodiments have been shown in the context of single-pole,multiple throw switches. However, the invention is similarly applicableto multiple-pole, multiple throw switches, to multiple pole, singlethrow switches, and to single pole, single throw switches.

In all of the examples shown in the accompanying figures, the switchingand passive elements may be implemented in any suitable IC technology,including but not limited to MOSFET and IGFET semiconductor structuresand micro-electromechanical systems (MEMS). Integrated circuitembodiments may be fabricated using any suitable substrates andprocesses, including but not limited to standard bulk silicon,silicon-on-insulator (SOI), and silicon-on-sapphire (SOS) processes.Moreover, while the embodiments above have been described in the contextof switching RF signals, the inventive architecture may be used in anyapplication in which the permanent “OFF” state of the shuntable switchstructure would be useful.

Another aspect of the invention includes a method for embodying a switchhaving open reflective unselected ports as an integrated circuit,including the steps of:

STEP 1: fabricating at least one series switch, each series switch beingcoupled to a common port and to an associated selectable port such thatselection of at least one series switch electrically couples the commonport to the selectable port associated with the selected series switch,and decouples the common port from all unselected selectable ports;

STEP 2: fabricating, for each series switch, an associated shuntableswitch, each shuntable switch being coupled between ground and theselectable port associated with such associated series switch; and

STEP 3: configuring each shuntable switch to be electricallynon-conductive at all times to signals below a breakdown voltagethreshold of such shuntable switch and electrically conductive tosignals above such breakdown voltage threshold.

Another aspect of the invention includes a method for embodying a switchhaving open reflective unselected ports as an integrated circuit,including the steps of:

STEP 1: fabricating at least one series switch, each series switch beingcoupled to a common port and to an associated selectable port such thatselection of at least one series switch electrically couples the commonport to the selectable port associated with the selected series switch,and decouples the common port from all unselected selectable ports; and

STEP 2: fabricating a shuntable switch coupled between ground and thecommon port, wherein such shuntable switch is configured to beelectrically non-conductive at all times to signals below a breakdownvoltage threshold of such shuntable switch and electrically conductiveto signals above such breakdown voltage threshold.

A number of embodiments of the invention have been described. It is tobe understood that various modifications may be made without departingfrom the spirit and scope of the invention. For example, some of thesteps described above may be order independent, and thus can beperformed in an order different from that described. It is to beunderstood that the foregoing description is intended to illustrate andnot to limit the scope of the invention, which is defined by the scopeof the following claims, and that other embodiments are within the scopeof the claims.

What is claimed is:
 1. A switching device having open reflectiveunselected ports, including: (a) at least one series switch, each seriesswitch being coupled to a common port and to an associated selectableport such that selection of at least one series switch electricallycouples the common port to the selectable port associated with each suchselected series switch, and decouples the common port from allunselected selectable ports; and (b) for each series switch, anassociated shuntable switch, each shuntable switch being coupled betweenground and the selectable port associated with such associated seriesswitch, wherein each shuntable switch is configured to be electricallynon-conductive at all times to signals below a breakdown voltagethreshold of such shuntable switch and electrically conductive tosignals above such breakdown voltage threshold.
 2. The switching deviceof claim 1, further including configuration and control circuitry,coupled to each shuntable switch, for selectively alternativelyconfiguring each shuntable switch to be electrically conductive for allunselected selectable ports.
 3. The switching device of claim 1, furtherincluding a shuntable switch coupled between ground and the common port,wherein such shuntable switch is configured to be electricallynon-conductive at all times to signals below a breakdown voltagethreshold of such shuntable switch and electrically conductive tosignals above such breakdown voltage threshold.
 4. An integrated circuitdie for a switching device having open reflective unselected ports,including: (a) at least one series switch, each series switch beingcoupled to a common port and to an associated selectable port such thatselection of at least one series switch electrically couples the commonport to the selectable port associated with each selected series switch,and decouples the common port from all unselected selectable ports; (b)for each series switch, an associated shuntable switch, each shuntableswitch being coupled between ground and the selectable port associatedwith such associated series switch; and (c) a configurable layoutwherein each shuntable switch is selectively configurable by aninterconnect mask to be either (1) electrically non-conductive at alltimes to signals below the breakdown voltage threshold of such shuntableswitch and electrically conductive to signals above such breakdownvoltage threshold, or (2) electrically conductive for all unselectedselectable ports.
 5. The integrated circuit die of claim 4, furtherincluding a shuntable switch coupled between ground and the common port,wherein such shuntable switch is configured to be electricallynon-conductive at all times to signals below a breakdown voltagethreshold of such shuntable switch and electrically conductive tosignals above such breakdown voltage threshold.
 6. A method forembodying a switching device having open reflective unselected ports asan integrated circuit, including the steps of: (a) fabricating at leastone series switch, each series switch being coupled to a common port andto an associated selectable port such that selection of at least oneseries switch electrically couples the common port to the selectableport associated with the selected series switch, and decouples thecommon port from all unselected selectable ports; (b) fabricating, foreach series switch, an associated shuntable switch, each shuntableswitch being coupled between ground and the selectable port associatedwith such associated series switch; and (c) configuring each shuntableswitch to be electrically non-conductive at all times to signals below abreakdown voltage threshold of such shuntable switch and electricallyconductive to signals above such breakdown voltage threshold.
 7. Themethod of claim 6, further including the step of fabricating a shuntableswitch coupled between ground and the common port, wherein suchshuntable switch is configured to be electrically non-conductive at alltimes to signals below a breakdown voltage threshold of such shuntableswitch and electrically conductive to signals above such breakdownvoltage threshold.
 8. The method of claim 6, wherein the step ofconfiguring further includes alternatively configuring each shuntableswitch to be electrically conductive for all unselected selectableports.
 9. A switching device having open reflective unselected ports,including: (a) at least one series switching means, each seriesswitching means being coupled to a common port and to an associatedselectable port such that selection of at least one series switchingmeans electrically couples the common port to the selectable portassociated with the selected series switching means, and decouples thecommon port from all unselected selectable ports; and (b) for eachseries switching means, an associated shuntable switching means, eachshuntable switching means being coupled between ground and theselectable port associated with such associated series switching means,wherein each shuntable switching means is configured to be electricallynon-conductive at all times to signals below a breakdown voltagethreshold of such shuntable switching means and electrically conductiveto signals above such breakdown voltage threshold.
 10. The switchingdevice of claim 9, further including configuration and control means,coupled to each shuntable switching means, for selectively alternativelyconfiguring each shuntable switching means to be electrically conductivefor all unselected selectable ports.
 11. The switching device of claim9, further including a shuntable switch coupled between ground and thecommon port, wherein such shuntable switch is configured to beelectrically non-conductive at all times to signals below a breakdownvoltage threshold of such shuntable switch and electrically conductiveto signals above such breakdown voltage threshold.
 12. A switchingdevice having open reflective unselected ports, including: (a) at leastone series switch, each series switch being coupled to a common port andto an associated selectable port such that selection of at least oneseries switch electrically couples the common port to the selectableport associated with each such selected series switch, and decouples thecommon port from all unselected selectable ports; and (b) a shuntableswitch coupled between ground and the common port, wherein suchshuntable switch is configured to be electrically non-conductive at alltimes to signals below a breakdown voltage threshold of such shuntableswitch and electrically conductive to signals above such breakdownvoltage threshold.
 13. The switching device of claim 12, furtherincluding, for each series switch, an associated shuntable switch, eachshuntable switch being coupled between ground and the selectable portassociated with such associated series switch, wherein each shuntableswitch is configured to be electrically non-conductive at all times tosignals below a breakdown voltage threshold of such shuntable switch andelectrically conductive to signals above such breakdown voltagethreshold.
 14. The switching device of claim 13, further includingconfiguration and control circuitry, coupled to each shuntable switch,for selectively alternatively configuring each shuntable switch to beelectrically conductive for all unselected selectable ports.
 15. Anintegrated circuit die for a switching device having open reflectiveunselected ports, including: (a) at least one series switch, each seriesswitch being coupled to a common port and to an associated selectableport such that selection of at least one series switch electricallycouples the common port to the selectable port associated with eachselected series switch, and decouples the common port from allunselected selectable ports; and (b) a shuntable switch coupled betweenground and the common port, wherein such shuntable switch is configuredto be electrically non-conductive at all times to signals below abreakdown voltage threshold of such shuntable switch and electricallyconductive to signals above such breakdown voltage threshold.
 16. Theintegrated circuit die of claim 15, further including, for each seriesswitch, an associated shuntable switch, each shuntable switch beingcoupled between ground and the selectable port associated with suchassociated series switch.
 17. The integrated circuit die of claim 16,further including a configurable layout wherein each shuntable switch isselectively configurable by an interconnect mask to be either (1)electrically non-conductive at all times to signals below the breakdownvoltage threshold of such shuntable switch and electrically conductiveto signals above such breakdown voltage threshold, or (2) electricallyconductive for all unselected selectable ports.
 18. A method forembodying a switching device having open reflective unselected ports asan integrated circuit, including the steps of: (a) fabricating at leastone series switch, each series switch being coupled to a common port andto an associated selectable port such that selection of at least oneseries switch electrically couples the common port to the selectableport associated with the selected series switch, and decouples thecommon port from all unselected selectable ports; and (b) fabricating ashuntable switch coupled between ground and the common port, whereinsuch shuntable switch is configured to be electrically non-conductive atall times to signals below a breakdown voltage threshold of suchshuntable switch and electrically conductive to signals above suchbreakdown voltage threshold.
 19. The method of claim 18, furtherincluding the step of fabricating, for each series switch, an associatedshuntable switch, each shuntable switch being coupled between ground andthe selectable port associated with such associated series switch. 20.The method of claim 19, further including the step of configuring eachshuntable switch to be electrically non-conductive at all times tosignals below a breakdown voltage threshold of such shuntable switch andelectrically conductive to signals above such breakdown voltagethreshold.
 21. The method of claim 20, wherein the step of configuringfurther includes alternatively configuring each shuntable switch to beelectrically conductive for all unselected selectable ports.
 22. Aswitching device having open reflective unselected ports, including: (a)at least one series switching means, each series switching means beingcoupled to a common port and to an associated selectable port such thatselection of at least one series switching means electrically couplesthe common port to the selectable port associated with the selectedseries switching means, and decouples the common port from allunselected selectable ports; and (b) a shuntable switch coupled betweenground and the common port, wherein such shuntable switch is configuredto be electrically non-conductive at all times to signals below abreakdown voltage threshold of such shuntable switch and electricallyconductive to signals above such breakdown voltage threshold.
 23. Theswitching device of claim 22, further including, for each seriesswitching means, an associated shuntable switching means, each shuntableswitching means being coupled between ground and the selectable portassociated with such associated series switching means, wherein eachshuntable switching means is configured to be electricallynon-conductive at all times to signals below a breakdown voltagethreshold of such shuntable switching means and electrically conductiveto signals above such breakdown voltage threshold.
 24. The switchingdevice of claim 23, further including configuration and control means,coupled to each shuntable switching means, for selectively alternativelyconfiguring each shuntable switching means to be electrically conductivefor all unselected selectable ports.
 25. A series tuning circuitincluding: (a) at least one series switch, each series switch beingcoupled to a common port and to an associated selectable port such thatselection of at least one series switch electrically couples the commonport to the selectable port associated with each such selected seriesswitch, and decouples the common port from all unselected selectableports; (b) for each series switch, an associated shuntable switch, eachshuntable switch being coupled between ground and the selectable portassociated with such associated series switch, wherein each shuntableswitch is configured to be electrically non-conductive at all times tosignals below a breakdown voltage threshold of such shuntable switch andelectrically conductive to signals above such breakdown voltagethreshold; and (c) a tuning element including one or more impedanceelements coupled in series, each impedance element having an input nodeand an output node, and the tuning element having an input node and anoutput node, wherein the output node of the tuning element is coupled tothe common port, the input node of the tuning element is coupled to acorresponding selectable port, and the input/output nodes betweenimpedance elements within the tuning element are coupled tocorresponding selectable ports.
 26. A shunt tuning circuit including:(a) at least one series switch, each series switch being coupled to acommon port and to an associated selectable port such that selection ofat least one series switch electrically couples the common port to theselectable port associated with each such selected series switch, anddecouples the common port from all unselected selectable ports; (b) foreach series switch, an associated shuntable switch, each shuntableswitch being coupled between ground and the selectable port associatedwith such associated series switch, wherein each shuntable switch isconfigured to be electrically non-conductive at all times to signalsbelow a breakdown voltage threshold of such shuntable switch andelectrically conductive to signals above such breakdown voltagethreshold; and (c) a tuning element including one or more impedanceelements coupled in series, each impedance element having an input nodeand an output node, and the tuning element having an input node and anoutput node, wherein the common port is coupled to ground, and theinput/output nodes between impedance elements within the tuning elementare coupled to corresponding selectable ports.
 27. A shunt tuningcircuit including: (a) at least one series switch, each series switchbeing coupled to a common port and to an associated selectable port suchthat selection of at least one series switch electrically couples thecommon port to the selectable port associated with each such selectedseries switch, and decouples the common port from all unselectedselectable ports; (b) for each series switch, an associated shuntableswitch, each shuntable switch being coupled between ground and theselectable port associated with such associated series switch, whereineach shuntable switch is configured to be electrically non-conductive atall times to signals below a breakdown voltage threshold of suchshuntable switch and electrically conductive to signals above suchbreakdown voltage threshold; and (c) one or more impedance elements,each impedance element having an input node and an output node, whereinthe input nodes of each impedance element are coupled to correspondingselectable ports, the output nodes of each impedance element are coupledto ground, and the common port is connectable to an input signal.
 28. Aseries tuning circuit including: (a) at least one series switch, eachseries switch being coupled to a common port and to an associatedselectable port such that selection of at least one series switchelectrically couples the common port to the selectable port associatedwith each such selected series switch, and decouples the common portfrom all unselected selectable ports; (b) a shuntable switch coupledbetween ground and the common port, wherein such shuntable switch isconfigured to be electrically non-conductive at all times to signalsbelow a breakdown voltage threshold of such shuntable switch andelectrically conductive to signals above such breakdown voltagethreshold; and (c) a tuning element including one or more impedanceelements coupled in series, each impedance element having an input nodeand an output node, and the tuning element having an input node and anoutput node, wherein the output node of the tuning element is coupled tothe common port, the input node of the tuning element is coupled to acorresponding selectable port, and the input/output nodes betweenimpedance elements within the tuning element are coupled tocorresponding selectable ports.
 29. A shunt tuning circuit including:(a) at least one series switch, each series switch being coupled to acommon port and to an associated selectable port such that selection ofat least one series switch electrically couples the common port to theselectable port associated with each such selected series switch, anddecouples the common port from all unselected selectable ports; (b) ashuntable switch coupled between ground and the common port, whereinsuch shuntable switch is configured to be electrically non-conductive atall times to signals below a breakdown voltage threshold of suchshuntable switch and electrically conductive to signals above suchbreakdown voltage threshold; and (c) a tuning element including one ormore impedance elements coupled in series, each impedance element havingan input node and an output node, and the tuning element having an inputnode and an output node, wherein the common port is coupled to ground,and the input/output nodes between impedance elements within the tuningelement are coupled to corresponding selectable ports.
 30. A shunttuning circuit including: (a) at least one series switch, each seriesswitch being coupled to a common port and to an associated selectableport such that selection of at least one series switch electricallycouples the common port to the selectable port associated with each suchselected series switch, and decouples the common port from allunselected selectable ports; (b) a shuntable switch coupled betweenground and the common port, wherein such shuntable switch is configuredto be electrically non-conductive at all times to signals below abreakdown voltage threshold of such 6shuntable switch and electricallyconductive to signals above such breakdown voltage threshold; and (c)one or more impedance elements, each impedance element having an inputnode and an output node, wherein the input nodes of each impedanceelement are coupled to corresponding selectable ports, the output nodesof each impedance element are coupled to ground, and the common port isconnectable to an input signal.
 31. The switching device of claims 1, 9,12, or 22, wherein the switching device is implemented in an integratedcircuit.
 32. The switching device of claims 1, 9, 12, or 22, wherein theswitching device switches radio frequencies.
 33. The integrated circuitdie of claims 4 or 15, wherein the switching device switches radiofrequencies.
 34. The method of claims 6 or 18, wherein the switchingdevice is for switching radio frequencies.
 35. The series tuning circuitof claims 25 or 28, wherein the series tuning circuit switches radiofrequencies.
 36. The shunt tuning circuit of claims 26, 27, 29, or 30,wherein the shunt tuning circuit switches radio frequencies.
 37. Theseries tuning circuit of claims 25 or 28, wherein the series tuningcircuit is implemented as in an integrated circuit.
 38. The shunt tuningcircuit of claims 26, 27, 29, or 30, wherein the shunt tuning circuit isimplemented as in an integrated circuit.
 39. The switching device ofclaims 1, 4, 12, 15, 25, 26, 27, 28, 29, or 30 wherein a least oneswitch is implemented as a field effect transistor.
 40. The method ofclaims 6 or 18, wherein a least one switch is implemented as a fieldeffect transistor.
 41. The switching device of claims 9 or 22, wherein aleast one switching means is implemented as a field effect transistor.